Magnetic domain structures of precipitation-hardened SmCo 2：17-type sintered magnets： Heat treatment effect

The typical magnetic domains of Sm（CObalFe0.25Cuo.07Zr0.02）7.4 magnets quenched through various heattreatment steps have been revealed by using magnetic force microscopy （MFM）. For the specimens in which the nominal c-axis is perpendicular to the imaging plane, the domain configurations change from plate-like for the as-sintered magnet to corrugation and spike-like for the homogenized one, and then to a coarse and finally to a finer domain structure when isothermally aged at 830℃ and then annealed at 400℃. However, only plate-like domains can be detected on the surfaces with the nominal c-axis parallel to the imaging plane. The finer domain （so-called interaction domain） is a characteristic magnetic domain pattern of the SmCo 2：IT-type magnets with high coercivities. Domain walls in a zigzag shape are revealed by means of MFM in final bulk SraCo 2：17-type sintered magnets.     

Carriers recombination processes in charge trapping memory cell by simulation

We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell＇s performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.     

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550°C to 700°C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100°C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600°C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600°C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600°C, the Hall mobility achieves up to 938 cm²/Vs with electron concentration of 3.9 × 10¹⁸ cm⁻³. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Natural Science Foundation of China (Grant Nos. 6039072, 60476030 and 60421003), the Great Fund of the Ministry of Education of China (Grant No. 10416), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004), and the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2005210 and BK2006126)     

The interaction of nonlinear waves in two-dimensional lattice

This paper investigates the collision between two nonlinear waves with arbitrary angle in two-dimensional nonlinear lattice. By using the extended Poincarge-Lighthill-Kuo perturbation method, it obtains two Korteweg-de Vries equations for nonlinear waves in both the ζ and η directions, respectively, and derives the analytical phase shifts after the collision of two nonlinear waves. Finally, the solution of u（υ） up to O（ε^3） order is given.     

Breaking chaotic shift key communication via adaptive key identification

This paper proposes an adaptive parameter identification method for breaking chaotic shift key communication from the transmitted signal in public channel. The sensitive dependence property of chaos on parameter mismatch is used for chaos adaptive synchronization and parameter identification. An index function about the synchronization error is defined and conjugate gradient method is used to minimize the index function and to search the transmitter's parameter (key). By using proposed method, secure key is recovered from transmitted signal generated by low dimensional chaos and hyper chaos switching communication. Multi-parameters can also be identified from the transmitted signal with noise.     

Linear and nonlinear optical properties of ZnO nanorod arrays

Polarization-dependent linear absorption, second-harmonic generation （SHG） and 3rd-order nonlinearities of wellaligned ZnO nanorod arrays have been investigated with ps pulses. The depressed spectral width and the enhanced intensity of reflective SHG along the long axis of ZnO nanorods were observed by using p-polarized pulses, which is explained by the optical confinements. The nonlinear absorption coefficient measured with s-polarization reached the maximum 4.0×10^4cm/GW at the wavelength -750nm, which revealed a large two-photon resonance absorption attributed to the quantum confined exciton when the polarization is vertical to the long axis of ZnO nanorod.     

用于闪光照相的1MV Rod-Pinch二极管辐射特性

Rod-Pinch二极管(RPD)在小尺度闪光照相方面具有良好的应用前景.根据理论方面的研究结果以及实验室具备的驱动源装置水平,设计了相应结构的RPD,并在1MV工作电压下开展了较为详细的性能实验研究.最终在二极管轴向(0.方向)lm处得到的x光剂量为1.21rad-1.45rad.对于阳极直径为lmm的二极管,其X光焦斑直径仅为0.8mm-1.1mm.X光信号的脉宽为18.1ns-27.5ns.研究表明RPD将是一种用于小尺度闪光照相的理想的X光源.     

Experimental study on generation of high energy few cycle pulses with hollow fiber filled with neon

25 fs pulses with energy up to 0.8 mJ from a multi-pass amplifier system have been spectrally broadened from 460 nm to 950 nm due to strong self-phase modulation (SPM) effect in a gas filled hollow fiber. Using a set of chirped mirrors, the ultra-broadband dispersion compensation was achieved, and the compressed pulses reached their transform limit. Under optimized conditions we achieved pulses with duration of 5.1 fs and with energy of 400 μJ, corresponding to the peak power up to 80 GW. Supported by the National Natural Science Foundation of China (Grant Nos. 60608003, 60490280, 60225005 and 60621063)     

Ultraviolet and visible upconversion luminescence of Tm(0.1)Yb(5):FOV oxyfluoride nanophase vitroceramics

The ultraviolet upconversion luminescence of Tm³⁺ ions sensitized by Yb³⁺ ions in oxyfluoride nanophase vitroceramics when excited by a 975 nm diode laser was studied. An ultraviolet upconversion luminescence line positioned at 363.6 nm was found. It was attributed to the fluorescence transition of ¹D₂→³H₆ of Tm³⁺ ion. Several visible upconversion luminescence lines at 450.7 nm, (477.0 nm, 462.5 nm), 648.5 nm, (680.5 nm, 699.5 nm) and (777.2 nm, 800.7 nm) were also found, which result respectively from the fluorescence transitions of ¹D₂→³F₄, ¹G₄→³H₆, ¹G₄→³F₄, ³F₃→³H₆ and ³H₄→³H₆ of Tm³⁺ ion. The careful measurement and analysis of the variation of upconversion luminescence intensity F as a function of the 975 nm pumping laser power P prove that the upconversion luminescence of ¹D₂ state is partly a five-photon upconversion luminescence, and the upconversion luminescence of ¹G₄ state and ³H₄ state are respectively the three-photon and two-photon upconversion luminescence. The theoretical analysis suggested that the upconversion mechanism of the 363.6 nm ¹D₂→³H₆ upconversion luminescence is partly the cross energy transfer of {³H₄(Tm³⁺), ³F₄(Tm³⁺), ¹G₄(Tm³⁺)→¹D₂(Tm³⁺)} and {¹G₄(Tm³⁺)→³F₄(Tm³⁺), ³H₄(Tm³⁺)→¹D₂(Tm³⁺)} between Tm³⁺ ions. In addition, the upconversion luminescence of ¹G₄ and ³H₄ state results respectively from the sequential energy transfer {²F_5/2(Yb³⁺)→²F_7/2(Yb³⁺), ³H₄(Tm³⁺)→¹G₄(Tm³⁺)} and {²F_5/2(Yb³⁺) →²F_7/2(Yb³⁺), ³F₄(Tm³⁺)→³F₂(Tm³⁺)} from Yb³⁺ ions to Tm³⁺ ions. Supported by the National Natural Science Foundation of China (Grant No. 10674019)     

Completely solid-state LD-side-pumped Nd:YAlO<Subscript>3</Subscript> CW blue laser with intracavity frequency tripling

We report a completely solid-state continuous-wave (CW) blue laser operating at 447 nm utilizing intracavity frequency tripling of an LD-side-pumped Nd:YAlO₃ (Nd:YAP) laser operating at 1341.4 nm. An LBO crystal with type-I critical phase matching and a KTP crystal with type-II critical phase matching (CTM) were used for the second harmonic generation (SHG) and the third harmonic generation (THG), respectively. In view of the analysis of the cavity stability, a four-mirror folded cavity was designed and the output characteristics were theoretically analyzed. Experimental characteristics obtained were shown to be in agreement with the theoretical analysis. The maximum output power of the 447 nm CW blue laser reached 114 mW, which corresponds to a red-to-blue conversion efficiency of 9%.